X

Power Assemblies and Controllers

IGBT Gate Drivers

IXYS offers a wide range of low-side, high-side & low-side and optically isolated IGBT & MOSFET Gate Drivers for a large number of applications.

The low-side gate drivers are ultra fast and are high current IGBT and MOSFET gate drivers that are optimised for high efficiency performance in motor drive and power conversion applications.  

The high-side gate drivers use a common mode design technique to provide stable operation in high dV/dt noise environments. 

The high-side & low-side gate drivers are configured with independent high-side and low-side referenced output channels which can both source and sink up to 2A. 

The optically isolated gate drivers feature infrared light emitting diodes with photovoltaic integrated circuits to provide voltage for turn-on of discrete MOSFETs and feature a gate-clamping circuit to provide fast turn-off. 

 

Low-side

IXYS Low-Side gate drivers are ultra fast, high current MOSFET and IGBT gate drivers that are optimised for high efficiency performance in motor drive and power conversion applications. They are designed to switch the largest MOSFETs and IGBTs with minimum switching times and at frequencies up to 10MHz. They have output current ratings of 1.5A to 30A and depending on the output current rating, these gate drivers are available in DFN (56), SOIC (54), Power SOIC (53), DIP (20), TO-220 (57) and TO-263 (58) packages. The ‘F’ versions include one inverting driver and one non-inverting driver, ‘I’ versions are inverters, ‘N’ versions are non-inverters and ‘D’ versions are non-inverters that include an enable function.

Part Number

Package/Case

Supply Voltage - Min

Supply Voltage -Max

Operating Supply Current

Rise Time

Fall Time

IXDD430CI TO-220-5 8.5V 35V 10 uA 18 ns 16 ns
IXDD509SIA SOIC-8 4.5V 30V 10 uA 60 ns 60 ns

IXDD604D2TR

DFN-8

4.5V

35V

10 uA

9 ns

8 ns

IXDN602SIA

SOIC-8

4.5V

35V

10 uA

7.5 ns

6.5 ns

IXDD609SIA

SOIC-8

4.5V

35V

10 uA

22 ns

15 ns

IXDN604SIA

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDD604SIA

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDD604SIATR

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDN614PI

DIP-8

4.5V

35V

1 mA

25 ns

18 ns

IXDN609SI

SOIC-8

4.5V

35V

10 uA

22 ns

15 ns

IXDD609SI

SOIC-8

4.5V

35V

10 uA

22 ns

15 ns

IXDN609YI

TO-263-5

4.5V

35V

10 uA

22 ns

15 ns

IXDD614SI

SOIC-8

4.5V

35V

10 uA

50 ns

40 ns

IXDD614YI

TO-263-5

4.5V

35V

10 uA

25 ns

18 ns

IXDD614CI

TO-220-5

4.5V

35V

10 uA

50 ns

40 ns

IXDD630YI

TO-263-5

12.5V

35V

10 uA

11 ns

11 ns

IX4426N

SOIC-8

4.5V

35V

4 mA

10 ns

8 ns

IXDI630CI

TO-220-5

12.5V

35V

10 uA

20 ns

20 ns

IXDD630MYI

TO-263-5

9V

35V

10 uA

11 ns

11 ns

IXDN630MYI

TO-263-5

9V

35V

10 uA

20 ns

20 ns

IXDN604SIATR

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDI630YI

TO-263-5

12.5V

35V

10 uA

20 ns

20 ns

IXDN609SITR

SOIC-8

4.5V

35V

10 uA

22 ns

15 ns

IXDI609YI

TO-263-5

4.5V

35V

10 uA

22 ns

15 ns

IXDN604SITR

SOIC-8

4.5V

35V

10 uA

 9 ns

8 ns

IX4427N

SOIC-8

4.5V

35V

4 mA

10 ns

8 ns

IXDN609PI

DIP-8

4.5V

35V

10 uA

22 ns

15 ns

IXDI604SIA

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDD604PI

DIP-8

4.5V

35V

10 uA

9 ns

8 ns

IXDD614PI

DIP-8

4.5V

35V

1 mA

25 ns

18 ns

IXDD604SI

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDN630CI

TO-220-5

12.5V

35V

10 uA

20 ns

20 ns

IXDD609PI

DIP-8

4.5V

35V

10 uA

22 ns

15 ns

IXDI609SI

SOIC-8

4.5V

35V

10 uA

22 ns

15 ns

IX4427NTR

SOIC-8

4.5V

35V

4 mA

10 ns

8 ns

IXDI604PI

DIP-8

-0.3V

40V

1 mA

9 ns

8 ns

IXDN609SIATR

SOIC-8

4.5V

35V

10 uA

22 ns

15 ns

IXDF604SIA

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDI604SI

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IX4428N

SOIC-8

4.5V

35V

4 mA

10 ns

8 ns

IXDD609SIATR

SOIC-8

4.5V

35V

10 uA

22 ns

15 ns

IXDI609CI

TO-220-5

4.5V

35V

10 uA

22 ns

15 ns

IX4428NTR

SOIC-8

4.5V

35V

4 mA

10 ns

8 ns

IXDN604PI

DIP-8

4.5V

35V

10 uA

9 ns

8 ns

IXDF604PI

DIP-8

4.5V

35V

10 uA

9 ns

8 ns

IXDN604SI

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDN609CI

TO-220-5

4.5V

35V

10 uA

22 ns

15 ns

IXDN630YI

TO-263-5

12.5V

35V

10 uA

20 ns

20 ns

IXDF602SIA

SOIC-8

4.5V

35V

1 mA

7.5 ns

6.5 ns

IXDF604SI

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDD609CI

TO-220-5

4.5V

35V

10 uA

22ns

15 ns

IXDI609PI

DIP-8

4.5V

35V

10 uA

22 ns

15 ns

IX4425N

SOIC-8

4.5V

35V

3 mA

18 ns

18 ns

IXDD609D2TR

DFN-8

4.5V

35V

10 uA

22 ns

15 ns

IX4424N

SOIC-8

4.5V

35V

3 mA

18 ns

18 ns

IXDI609SIATR

SOIC-8

4.5V

35V

10 uA

22 ns

15 ns

IX4423N

SOIC-8

4.5V

35V

3 mA

18 ns

18 ns

IXDN609SIA

SOIC-8

4.5V

35V

10 uA

22 ns

15 ns

IXDD604SITR

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDD630CI

TO-220-5

12.5V

35V

10 uA

11 ns

11 ns

IXDI609SIA

SOIC-8

4.5V

35V

10 uA

22 ns

15 ns

IXDD609SITR

SOIC-8

4.5V

35V

10 uA

22 ns

15 ns

IXDF604SIATR

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDD609YI

TO-263-5

4.5V

35V

10 uA

22 ns

15 ns

IX4426NTR

SOIC-8

4.5V

35V

4 mA

10 ns

8 ns

IXDD630MCI

TO-220-5

9V

35V

10 uA

11 ns

11 ns

IXDD614SITR

SOIC-8

4.5V

35V

10 uA

25 ns

18 ns

IXDI630MCI

TO-220-5

9V

35V

10 uA

20 ns

20 ns

IXDN630MCI

TO-220-5

9V

35V

10 uA

20 ns

20 ns

IXDI604SIATR

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDI630MYI

TO-263-5

9V

35V

10 uA

20 ns

20 ns

IXDI604SITR

SOIC-8

4.5V

35V

10 uA

9 ns

8 ns

IXDI609SITR

SOIC-8

4.5V

35V

10 Ua

22 ns

15 ns

IX4424NTR

SOIC-8

4.5V

35V

3 Ma

18 ns

18 ns

IX4423NTR

SOIC-8

4.5V

35V

3 Ma

18 ns

18 ns

IXDF604SITR

SOIC-8

4.5V

35V

10 Ua

9 ns

8 ns

IX4425NTR

SOIC-8

4.5V

35V

3 Ma

18 ns

18 ns

 

High-side

The IXYS IX2127 high-side MOSFET and IGBT gate driver can operate at up to 600V. Common mode design techniques provide stable operation in high dV/dt noise environments. The IX2127 works by detecting an over-current condition in the driven IGBT or MOSFET device and shuts down the drive to that device. The over-current shutdown is evident due to an open-drain output occurring. The gate driver output can source 250mA and sink 500mA, which is suitable for fluorescent lamp ballast, motor control, SMPS and various other converter drive topologies. The IX2127 is available in 8-pin DIP and 8-pin SOIC packages.

View Datasheet

 

High-side & Low-side

The IXYS IX2113/IX21844 high-side & low-side MOSFET and IGBT Gate Driver ICs are a high voltage integrated circuit that can drive high speed MOSFETs and IGBTs that operate at up to +600V. These MOSFET and IGBT gate drivers are configured with independent high-side and low-side referenced output channels. Both of which can source and sink up to 2A. The floating high-side channel can drive an N-channel power MOSFET or IGBT 600V from the common reference. Manufactured by IXYS as part of the Integrated Circuits Division’s high voltage BCDMOS on SOI process, these drivers are extremely robust and are virtually immune to negative transients. The UVLO circuit prevents the turn-on of the MOSFET or IGBT until there is sufficient VBS or VCC supply voltage.

Part Number

Package/Case

Supply Voltage - Min

Supply Voltage – Max

Operating Supply Current

Rise Time

Fall Time

IX21844N

SOIC-14

10V

20V

150

60 ns

35 ns

IX21844G

DIP-14

10V

20V

150

60 ns

35 ns

IX2113B

SOIC-16

10V

20V

236

9.4 ns

9.7 ns

IX2113BTR

SOIC-16

10V

20V

236

9.4 ns

9.7 ns

IX21844NTR

SOIC-14

10V

20V

150

60 ns

35 ns

 

Optically Isolated

IXYS’ optically isolated MOSFET gate drivers couple infrared light emitting diodes with proprietary photovoltaic integrated circuits. In addition to providing voltage turn-on of discrete MOSFETs, these patented IC’s feature a gate-clamping circuit to provide fast turn-off. These devices offer a significant reduction in drive circuit complexity, board space and cost. Used with discrete MOSFETs, these devices are ideal for use in programmable controls, process control, instrumentation and telecommunications, replacing TRIAC/driver, mechanical relays and bipolar components.

FDA215

FDA217

CPC1580

CPC1590

IXYS

IXYS is a world leading manufacturer of power semiconductors, their product range includes: IGBTs, MOSFETs, Thyristors, Diodes and Semiconductor Accessories.

Further information:

You can find further information on IXYS using the following links:

Tel: 01444 243 452

Fax: 01444 870 722

Email: enquiries@gdrectifiers.co.uk