X

Power Assemblies and Controllers

IXYS Diodes

IXYS manufacture a broad range of diodes for high switching frequencies, available in surface mount and PCB mounted packages. IXYS manufacture a comprehensive range of Diodes which include: Gallium Arsendie Schottky Diodes, Silicon Carbide Schottky Diodes, Schottky Diodes, HiPerDyn™ FRED Diodes, Ultra Fast Diodes (Dual), HiPerFRED™ Diodes, Sonic-FRD™ Diodes, FRED Diodes, and Rectifier Diodes. These are available in a range of circuits including discrete, dual diodes, half bridge, full bridge (single and three phase), double diode common anode and cathode, and double diode anode and cathode. 

IXYS' Schottky Diodes are available in 8V to 200V with a current rating of 6A to 200A and are available in two packages: Silicon Schotty Diodes and Silicon Schottky Gen² Diodes (2nd generation). They feature low VF, low IRM-values and low noise switching. Other benefits of using the Schotty Diodes include: extremely low switching losses, high reliability circuit operation and low voltage peaks for reduced protection circuits. 

 

IXYS' manufacture a wide range of Rectifier Diodes available in DS-series (anode or stud) and DSI-series (cathode or stud) which are mainly used for rectifying 50 or 60 Hz mains currents. Discrete diodes in plastic and metal housings and different diode bridges are also available for standard line voltages from 110V to 690V AC. 

Dual Diode Modules

° Vrrm: 800V to 2200V. Ifav: 36A to 950A

° Single and phase leg modules

° Package with screw terminals. Space and weight savings

° Isolation voltage 3000V. UL recognised

° Planar passivated chips, utilise DCB technology

° Low forward voltage drop

° Improved temperature and power cycling

View Dual Diode Modules

 

Fast Recovery Epitaxial Diodes (HiPerFRED, FRED) and FRD (Sonic)

HiPerDYN™ FRED Ultra Fast Diodes

° VRRM from 300, 600 and 1200V

° IFAV range: 6A to 55A

° Very low capacitance <15pf

° Soft recovery

° Very low trr and IRM

° Available in Single and Phase-Leg

View HiPerDYN™ FRED Ultra Fast Diodes


SONIC-FRD™ Fast Recovery Diodes

° Blocking voltages: 600V, 1200V and 1800V

° Ifav: 10A to 60A

° Vf independent of junction temperature

° Extremely low leakage current

° Soft recovery event at high temperature

° Stable blocking voltage

View SONIC-FRD™ Fast Recovery Diodes

 

Fast Recovery (FRED) Diodes

° Blocking voltages: 200V to 1200V

° Ifav: 6A - 165A

° trr: < 40ns

° Single, Dual or Common Cathode configurations available

° Variety of packages, including isolated types available 

View Fast Recovery (FRED) Diodes

 

FRED & HiPerFRED™ Modules

° Vrrm: 200V to 1200V

° Ifav: 75A to 582A

° Single, Dual, Common Cathode, common Anode or Phase-Leg topology available 

° Available in a range of heavy duty package styles with screw terminals

View FRED & HiPerFRED™ Modules

 

Ultra Fast Recovery Diodes

IXYS' range of Ultra Fast Recovery Diodes are designed to offer the lowest practical values of reverse recovery current whilst offering wide safe operating area and high di/dt capability required by modern switching components such as IGBTs, GCTs and pulsed power applications.

View Dual Ultra Fast Recovery Diodes

 

SemiFast Diodes

° Voltage rating from 1400V to 1800V

° International standard package JEDEC TO-247 AD

° Planar passivated chips

° Very short recovery time

° Extremely low switching losses

° Low IRM-values

° Soft recovery behaviour

View SemiFast Diodes


Schottky Diodes

° Features Vrrm: 8V to 200V

° Ifav: 6A to 200A

° Very low VF, Low IRM-values, Low noise switching

° Extremely low switching losses

° High reliability circuit operation

° Low voltage peaks for reduced protection circuits

View Silicon Schottky Diodes

View Schottky Gen² Diodes

View Silicon Carbide Schottky Diodes


Rectifier & Avalanche Types

° Vrrm: 800 to 1600V

° If (avg): 2.3A to 110A

° DS: Standard, DSA: Avalanche rated

° Planar glassivated chips

° Ideal for 50/60Hz rectification

° Single, Phase-Leg, common Cathode or Dual Diode

View Rectifier & Avalanche Types

 

Rectifier Bridges and PFC

1- Rectifier Bridges

° Blocking voltages: 800V to 1800V

° Id (avg): 18A to 174A

° Package with screw terminals, space and weight savings

° Isolation voltage: 3000V, UL recognised

° Planar passivated chips, utilise DCB technology

° Low forward voltage drop

° Improved temperature and power cycling

View 1- Rectifier Bridges 

 

1- Half & Full Controlled Bridges

° Vrrm: 800V to 1600V

° Id (avg): 15A to 167A

° Isolation voltage 3000V, UL recognised

° Planar passivated chips

° Improved temperature and power cycling

° Economical method to generate controlled D.C. power from 1- or 3- mains

View 1- Half & Full Controlled Bridges

 

3- Rectifier Bridges

° Vrrm: 800V to 1800V

° Id (avg): 15A to 248A

° Screw terminals, space and weight savings

° Isolation voltage 3000V, UL recognised

° Planar passivated chips

° Low Vf. improved temperature and power cycling

View 3- Rectifier Bridges


3- Bridges with IGBT and Diode for Brake Unit

° Vrrm: 600V to 2200V

° Id (avg): 22A to 188A

° Soldering connections for PCB mounting

° Isolation voltage 3600V, UL recognised

° Fast IGBT & Ultrafast diode. Optional NTC Thermistor on some units

View 3- Bridges with IGBT and Diode for Brake Unit

 

1 & 3 Phase High Voltage Rectifier Modules

° Vrrm: 3200V to 24000V

° If (avg): 1.0A to 23A

° Single, 1-Phase or 3-Phase configurations

° Hermetically sealed Epoxy

° Use in oil (with cooling plate) or free air

° Avalanche rated, reduce protection circuits

° Improved temperature and power cycling

° Series or parallel operation 

View 1 & 3 Phase High Voltage Rectifier Modules

 

1- PFC Modules (1- Bridge + MOSFET Boost)

° Vdss: 500V

° Id: 35A to 47A, Low Rds(on) HDMOS™ process

° 1- diode input bridge feeding a MOSFET/FRED boost circuit

° Package with DCB ceramic base plate with isolation voltage 3600V

° Soldering connections for PCB mounting, low package inductance for high speed switching

View 1-PFC Modules (1-Bridge + MOSFET Boost)


3- PFC Modules

° 1- diode input bridge feeding a MOSFET/FRED or an IGBT/FRED boost circuit to form one unit of 3-PFC front

° Vdss: 500V, Id: 35A Rated MOSFET in a Diode Bridge rated Vrrm: 600V, Idav: 40A in VUM25-05E for up to 10KW power

° Vces: 1200V, Ic: 95A RBSOA rated NPT IGBT and Vrrm: 1200V, Idav: 40A Diode Bridge in VU130-12N1 for up to 15KW power

° Package with DCB ceramic base plate with isolation voltage 3600V

° Soldering connections for PCB mounting, low package inductance for high speed switching

View 3- PFC Modules

 

Diode Bridges

° Monolithic Construction

° Surface Mount Package

° Used in: telecommunications protection clamp, high voltage multiplexer switch

View Diode Bridge - CPC7556

View Diode Bridge - CPC7557

 

Breakover Diodes

° Transient voltage protection

° High voltage switches

° Crowbar

° Lasers

° Pulse generators

View Breakover Diodes

 

Fast Breakover Diodes

° Temperature coefficient Kt, reduced by a factor of 3

° Significant reduction of the switching-on time down to a few nanoseconds

° Applications include: high intensity discharge lighting (HID) and high DC current power transmissions for long distances

View Fast Breakover Diodes

 

For further information on all IXYS Diodes please call: 01444 243 452 or email: .(JavaScript must be enabled to view this email address). 

IXYS

IXYS is a world leading manufacturer of power semiconductors, their product range includes: IGBTs, MOSFETs, Thyristors, Diodes and Semiconductor Accessories.

Further information:

You can find further information on IXYS using the following links:

Tel: 01444 243 452

Fax: 01444 870 722

Email: enquiries@gdrectifiers.co.uk