IXYS 1200V XPT Gen4 B4 IGBT Series with Sonic Diode

The new IXYS 1200V XPT ™ Gen4 Trench IGBTs are the latest addition to the IXYS discrete IGBT product portfolio. The class B4 IGBTs are the medium-speed drives, optimised for applications requiring switching frequency in the range of 5-30kHz. These IXYS IGBTs are optimised to feature high surge current capability and low gate charge QG which is why they have low gate-drive requirements. The class B4 offers discrete devices with the highest power densities. DC collector currents of 110A at Tc=110°C can be achieved with these devices. Positive temperature coefficient of the on-state voltage, VCE (SAT) helps to ease paralleling. The low thermal resistance simplifies the thermal related design issues.

IXYS 1200V XPT Gen4 B4 IGBT

New Part Numbers

IXYH40N120B4H1

IXYH55N120B4H1

IXYN110N120B4H1

Features

• VCE (SAT) of 2.1V at TVJ=150°C
• Positive thermal coefficient of VCE(sat)
• Low gate charge, QG of 340 nC for 100A at TC=110°C
• Low thermal resistance, RthJC down to 0.18 K/W
• 1200V 110A at 110°C in discrete package

Benefits

• Low conduction losses
• Simplified paralleling of devices
• Low gate-driver requirement
• Reduced effort in thermal design
• High power density

Markets/Applications

• Power inverters
• UPS
• SMPS
• PFC Circuits
• Welding

For further information on these new 1200V XPT ™ Gen4 Trench IGBTs or other IXYS devices, please contact GD Rectifiers on 01444 243 452 or email [email protected].