Dynex H1 Generation 5 IGBT Modules

Dynex Semiconductor offers a 1.7kV Gen5 Trench Gate H1 IGBT Module, the DIM100H1HS17-PA500 is a H1 half bridge generation 5 trench gate IGBT module, with insulated gate bipolar transistor enhanced field stop and implantation technology.

Dynex H1 Generation 5 IGBT Modules

The 1000A 1700V IGBT modules have a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. Dynex H1 Generation 5 IGBT modules are designed to scale 250mm x 89mm and weigh 1200g. The module has a chip junction temperature operating range from -40°C to a maximum of 150°C and is suitable for applications within the industrial, renewable, power grid and traction markets.

Key Features

• Trench Gate IGBT
• Cu base with AI2O3 substrates
• 10μs short circuit withstand

Applications

• High power converters
• Renewable energy power conversion
• High reliability inverters
• Motor drives

Download DIM1000H1HS17-PA500 Datasheet

Dynex’s Powerline range of high-power modules includes half bridge, chopper, dual, single and bi-directional switch configurations and covers voltages from 1200V to 6500V with currents up to 3600A.

GD Rectifiers offers customers Dynex Semiconductors range of high voltage IGBT modules and fast recovery diodes.

For further information on Dynex’s H1 Generation 5 IGBT modules, or to discuss your requirements, please contact GD Rectifiers on: 01444 243 452 or email: [email protected].