17.06.2019
June 2019 – IXYS 1000V Ultra Junction X-Class HiPerFET MOSFETs
Published on: 17/06/2019
Optimised for soft-switching resonant mode power conversion applications
IXYS’ new 1000V ultra junction X-Class HiPerFET MOSFETs were launched at PCIM earlier this year, the product line is well-suited for high efficiency, high-power density applications including: power supplies, battery chargers and welding inverters. Each of the new MOSFETs can replace several parallel connected higher on-resistance devices for simpler design, high reliability and lower cost.
HiPerFET MOSFETs: Features
- Ultra low on-resistance RDS(on) and gate charge Qg
- Fast body diode
- Superior dv/dt performance
- Avalanche capability
- Available in international standard packages: TO-247, PLUS247, TO-268HV, SOT-227, TO 264, PLUS264
Advantages
- Higher efficiency
- Improved system reliability
- Easy to mount
- Space and cost savings
Applications
- Resonant mode power supplies
- AC and DC motor drives
- DC-DC converters
- Robotic and servo control
- Smart meters
- Renewable-energy inverters
- Welding inverters
- Battery chargers
Key Technology Advantages
Ultra Junction Technology
- Developed using a charge compensation principle and proprietary process technology
- Low conduction and switching losses
- Low gate drive requirements
- High power density
- Ultra low on-resistances in industry (66mΩ in SOT-227 and 89mΩ in PLUS264)
- Replacement for several parallel-connected higher on-resistance devices
Fast Body Diode
- Low reverse recovery charge QRM and time trr
- Able to achieve high efficiency and avoid device failure by removing all leftover energies during high-speed switching
Ruggedness
- Peak diode dv/dt recovery up to 50V/ns
- Reduced number of snubbers required
- Superior avalanche performance (EAS up to 3 Joules)
| Part Number | VDSS
(V) |
ID25
(A) |
RDS(on) max. mΩ | Qg(on) typ. (nC) | Trr typ. (ns) | RthJC max. (°C/W) | Package type |
| IXFH26N100X | 1000 | 26 | 320 | 113 | 220 | 0.145 | TO-247 |
| IXFT26N100XHV | 26 | 320 | 113 | 220 | 0.145 | TO-268HV | |
| IXFH32N100X | 32 | 220 | 130 | 200 | 0.14 | TO-247 | |
| IXFK32N100X | 32 | 220 | 130 | 200 | 0.14 | TO-264 | |
| IXFT32N100XHV | 32 | 220 | 130 | 200 | 0.14 | TO-268HV | |
| IXFN52N100X | 44 | 125 | 245 | 260 | 0.15 | SOT-227 | |
| IXFK52N100X | 52 | 125 | 245 | 260 | 0.1 | TO-264 | |
| IXFX52N100X | 52 | 125 | 245 | 260 | 0.1 | PLUS247 | |
| IXFN70N100X | 65 | 89 | 350 | 310 | 0.104 | SOT-227 | |
| IXFB70N100X | 70 | 89 | 350 | 310 | 0.07 | PLUS264 | |
| IXFN74N100X | 74 | 66 | 425 | 290 | 0.107 | SOT-227 |
GD Rectifiers is a franchised distributor for IXYS, Westcode and Littelfuse. They stock a wide range of IXYS components, including: diodes, IGBTs, MOSFETs, rectifier bridges, AC controlled thyristors, thyristors, IGBT and MOSFET gate drivers, SiC Power MOSFETs, SiC schottky diodes, switchable current regulators, thyristor module accessories, RF amplifiers, RF MOSFETs, hybrid modules, RF drivers, gunn diodes and solar components.
For further information on IXYS’ 1000V Ultra Junction X-Class HiPerFET MOSFETs please call GD Rectifiers on: 01444 243 452 or email: enquiries@gdrectifiers.co.uk.
