05.05.2022
Dynex’s H2 Generation 5 IGBT Modules
Published on: 05/05/2022
Dynex’s H2 Generation 5 IGBT Modules – 1.2kV and 1.7kV Gen5 Trench Gate H2 IGBT Modules
Dynex’s DIM900H2HS12-PA500 and DIM650H2HS17-PA500 are half bridge 1200V and 1700V generation 5 trench gate IGBT modules with enhanced field stop and implantation technology.
The half bridge modules encompass a unique high reliability soldering system and solder layer uniformity control technology, to strengthen thermal cycling capability. In addition, they offer ultrasonic terminal welding technology with low impedance, large load capacity and strong resistance to mechanical shock.
The modules incorporate an electrically isolated base plate and low inductance construction, allowing the IGBT devices to enable circuit designers the ability to optimise circuit layouts and utilise grounded heat sinks for safety.
The H2 package is designed to scale: 172mm x 89mm x 38mm and weighs 900g. The modules have a chip junction temperature operating range from -40°C to a maximum of 150°C and are suitable for industrial, renewable and traction applications.
Dynex’s H2 Generation 5 IGBT Modules Key Features
– Trench Gate IGBT
– Cu Base with AI2O3
– High thermal cycling capability
– 10μs short circuit withstand
– High current density
– Low Vce(sat) Variant
Dynex’s H2 Generation 5 IGBT Modules Applications
– Motor drives
– High power converters
– Renewable energy power conversion
– High reliability inverters
Dynex’s Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 3600A.
Download the DIM900H2HS12-PA500
Download the DIM650H2HS17-PA500
GD Rectifiers is an official distributor for Dynex Semiconductors, stocking their comprehensive range of high-power IGBT modules and fast recovery diodes.
For further information on Dynex’s H2 IGBT modules, or to discuss your requirements, please contact GD Rectifiers on: 01444 243 452 or email: [email protected].