Category: IXYS

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June 2014 – IXYS Introduce a New High Performance DT-Triac™ Technology Platform
IXYS Introduce a New High Performance DT-Triac™ Technology Platform

June 2014 – IXYS Introduce a New High Performance DT-Triac™ Technology Platform

Published on: 13/06/2014 IXYS Corporation (NASDAQ: IXYS), a leader in power semiconductors and integrated circuits technologies for energy efficient products used in power conversion and motor control applications, announces today the extension of its Triac-family for AC-Control applications. IXYS New High Performance DT-Triac™ Technology Platform This new IXYS Triac design is the combination of two […]

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May 2013 – IXYS release a new 3.6kV 630A Dual Isolated Base Rectifier Modules
MDD710 36N2 image

May 2013 – IXYS release a new 3.6kV 630A Dual Isolated Base Rectifier Modules

Published on: 07/05/2013 IXYS UK Westcode Ltd has added a new higher voltage rectifier diode to the dual isolated base module product portfolio. The diodes, rated at up to 3600 volt, are encapsulated in the industry standard 5.87 inch (149mm) x  2.36 inch (60mm) base plate housing. Dual Isolated Base Rectifier Modules The diodes have […]

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March 2013 – IXYS release a new range of 650V XPT™ Trench IGBTs
IXXH30N65B4 Trench IGBTs

March 2013 – IXYS release a new range of 650V XPT™ Trench IGBTs

Published on: 08/03/2013 GD Rectifiers is please to announce the availability of the new IXYS range of 650V XPT™ Trench IGBTs. These are highly efficient low on-state voltage IGBTs The current ratings of devices in the new product family range from 30A to 200A at a high temperature of 110°C. With on-stage voltages as low […]

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November 2010 – IXOLAR New IXYS High Efficiency SolarBIT
IXOLAR New IXYS High Efficiency SolarBIT

November 2010 – IXOLAR New IXYS High Efficiency SolarBIT

Published on: 24/11/2010 SolarBITs are IXYS’ product line of SolarBITs made of monocrystalline, high efficiency solar cells. The IXOLAR SolarBITs is an ideal for charging various battery powered and handheld consumer products such as mobile phones, cameras, PDAs, MP3-Players and toys. They are also suitable for industrial applications such as wireless sensors, portable instrumentation and […]

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May 2010 – IXYS News
IXYS News 2010 page 1

May 2010 – IXYS News

Published on: 19/05/2010 Discover the latest IXYS news, including new products, industry developments and market updates IXYS News For 2010, IXYS have introduced the following products: New higher operating temperatures in the new SIMBus A package New Megawatt Press-pack IGBT Extended the energy efficiency of the XPT IGBT product range Added the Zilog to the […]

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February 2010 – New CoolMOS portfolio

February 2010 – New CoolMOS portfolio

Published on: 15/02/2010 CoolMOS™ – Coolest & fastest The revolutionary CoolMOS™ power MOSFET family enables a significant reduction of conducting and switching losses in Switched Mode Power Supplies (SMPS). Latest generation of high voltage power MOSFETs will make AC/DC power supplies even more efficient, more compact, lighter and cooler. This target is achieved by offering […]

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January 2010 – New Generation of Silicon Schottky Rectifiers
New Generation of Silicon Schottky Rectifiers page 1

January 2010 – New Generation of Silicon Schottky Rectifiers

Published on: 11/01/2010 Introducing a New Generation of Silicon Schottky Rectifiers IXYS Corporation – a leader in power semiconductors for Power Conversion and Motion Control applications – offers a new generation of Schottky rectifiers. A wide range of breakdown voltage – from 8V to 200V – application-optimised designs and an improved thermal behavior are the […]

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November 2009 – IXYS New XPT IGBT
IXYS XPT IGBT page 1

November 2009 – IXYS New XPT IGBT

Published on: 26/11/2009 Introducing IXYS New XPT IGBT, IXYS’ latest generation of short-circuit rated high voltage IGBTs with fast switching and low conduction losses IXYS New XPT IGBT IXYS introduces the XPT IGBT, IXYS’ latest generation of short-circuit rated high voltage IGBTs with fast switching and low conduction losses. This IGBT family was developed in […]

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