IXYS 3600V Reverse Conducting IGBTs for High Voltage, High Current Applications

Published on: 01/03/2017

IXYS’ 3600V Reverse Conducting IGBTs feature “free” intrinsic body diodes and current ratings from 45A-125A

These devices present combined strengths of both MOSFETs and IGBTs. They are ideal for high speed, high voltage and high current power conversion applications.

By using these high voltage BiMOSFETs, power circuit designers can eliminate multiple series-parallel lower voltage, lower current rated devices, reducing the number of power components required and simplifying their associated gate drive circuitry.  This results in much simpler system designs with lower costs and improved reliability.

Reverse Conducting IGBTs

The 3600V BiMOSFETs can be utilised in a number of power switching systems, including switched mode and resonant mode power supplies, uninterruptible power supplies, laser and X-ray generators, capacitor discharge circuits and AC switches.

These reverse conducting IGBTs are available in the following international standard size packages: ISOPLUS i4-Pak, ISOPLUS i5-Pak and TO-24PLUS-HV. The first two packages provide an electrical isolation of 4000V through the Direct Copper Bond (DCB) substrate technology. The TO-247PLUS-HV has an increased creepage distance between leads, making it possible to withstand higher voltages. The part numbers include: IXBF20N360, IXBF50N360, IXBL60N360 and IXBX50N360HV with collector current ratings of 45A, 70A, 92A and 125A.

GD Rectifiers are a Franchised Distributor for IXYS products in the UK.  GD Rectifiers are the largest online stockist for IXYS IGBTs, Diodes, Thyristors and MOSFETs. Offering components at the best prices with unrivalled fast delivery.

Shop the full IXYS product range here or contact us today for more information on: 01444 243 452 / [email protected].