SiC Schottky Diodes

Our range of Silicon Carbide (SiC) Schottky diodes offer superior switching performance compared to existing discrete SiC solutions, and low thermal resistance provides integrated isolation up to 3000V.

SiC Schottky Diodes by GD Rectifiers

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SiC Schottky Diodes

IXYS offers silicon carbide solutions based on it’s own ISOPLUS technology with DCB (Direct Copper Bonded) substrates and transfer molded packages. These packages allow for dense layouts with the benefit of reduced current loops and low stay inductance.

IXYS’ silicon carbide schottky diodes offer superior switching performance compared to existing discrete SiC solutions, ISOPLUS packages offer a low thermal resistance while providing integrated isolation up to 3000V and very high thermal and power cycling capability.

IXYS Silicon Carbide Product Range

IXYS silicon carbide schottky diodes provides designers with the choice to select the right product for performance and cost efficiency.

IXYS can generate customer specific SiC products on request, for further information please contact us on: 01444 243 452 or email: [email protected].

 

No Reverse Recovery

Type                    

   

            

 Vrrm    

        

V

 IF80 per diode  

 

A

 Ifav d = 0.5

 

A

 @ Tc  

   

°C   

 Vf                  @ If    

    typ. Tvj = 175°C  

V                     A       

 Rthjc

K/W  
                                                                           Dual
DCG 45X1200NA 1200 30 2x 22 80 2.20 20 1.10
DCG 85X1200NA 59 2x 43 80 2.20 40 0.57
DCG 100X1200NA 66 2x 49 80 2.25 50 0.51
DCG 130X1200NA 88 2x 64 80 2.30 60 0.39
                                                                             Common Cathode
DCG 20C1200HR 1200 13 2x 10 80 2.20 10 3.0
DCG 35C1200HR 23 2x 17 80 2.20 20 1.8
                                                                           Phase Leg
DCG 10P1200HR 2x 1200 13 10 80 2.20 10 3.0
DCG 17P1200HR 23 17 80 2.20 20 1.8
                                                                                Full Bridge
DCG 20B650LB 650 16 10.5 80 2.0 10 2.1
FBS 10-12SC 1200 4.5 80 2.6 5 7.0
DCG 20B1200LB 12.5 9.2 80 2.0 20 3.3

 

Double Boost

Type              

  

 Circuit and Technology

   

 

 Vdss  

max 

V      

 ID80  

TC = 80°C    

A  

 Rds (on)    

max  

Ω

 IF80

Boost Diode   

A 
MKH 17RP650DCGLB Superjunction MOSFET C + SiC 650 2 x 16 0.11 2 x 16

 

For further information on IXYS’ silicon carbide schottky diodes please contact us on 01444 243 452 or email [email protected].